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Thermoelectric behaviour of (Bi0.5Sb0.5)2Te3 semiconducting alloy thin films
V. Damodara das
Published in
2001
Volume: 120
   
Issue: 5-6
Pages: 217 - 220
Abstract
The Jain-Verma theory has been applied to the thermoelectric data of vacuum flash-evaporated and annealed polycrystalline thin films of (Bi0.5Sb0.5)2Te3 alloys of different thicknesses to study the nature of principal carrier scattering mechanism and also to know the extent of other scattering mechanisms, simultaneously. It is found that the value of the energy dependent scattering index parameter lies between -0.45 and -0.4. This indicates that, even though the principal scattering mechanism in the films is the normal lattice scattering, other scattering like 'impurity' scattering, surface scattering and grain boundary scattering may be present. © 2001 Elsevier Science Ltd. All rights reserved.
About the journal
JournalSolid State Communications
ISSN00381098
Open AccessNo
Concepts (10)
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    Alloys
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    Annealing
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    Grain boundaries
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    Scattering
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    SEMICONDUCTING TELLURIUM COMPOUNDS
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    Thermoelectricity
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    Thin films
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    Vacuum applications
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    VACUUM FLASH-EVAPORATION
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    Semiconducting films