The potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage of fin field-effect transistors with doped and undoped channels. The accuracy of the model has been verified by the data from 3-D numerical device simulator. The variation of subthreshold slope and threshold voltage with device geometry and doping concentration in the channel has been studied. © 2006 IEEE.

Nandita Dasgupta

Department of Electrical Engineering

Amitava Dasgupta

Computer simulation

Electric currents

Mathematical models

Poisson equation

Semiconductor doping

Threshold voltage

Analytical model

FIN FIELD EFFECT TRANSISTOR (FINFET)

SUBTHRESHOLD CURRENT

Field effect transistors

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation

IEEE Transactions on Electron Devices

In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate material work function, and gate voltage. A model for the subthreshold behavior of three-terminal DG MOSFETs is also presented. The results of the models show excellent match with simulations using MEDICI. The analytical models provide physical insight which is helpful for device design. © 2008 IEEE.

Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETs

A threshold voltage model for mesa-isolated fully depleted silicon-on-insulator (FDSOI) MOSFETs, based on the analytical solution of three-dimensional (3-D) Poisson's equation is presented for the first time in this paper. The separation of variables technique is used to solve the 3-D Poisson's equation analytically with appropriate boundary conditions. Simple and accurate analytical expressions for the threshold voltage of the front and the back gate are derived. The model is able to predict short channel as well as narrow width effects in mesa-isolated FDSOI MOSFETs. The model is validated by comparing with the experimental results as well as with the numerical results available in the literature. © 2004 IEEE.

Threshold voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution OF 3-D poisson's equation

2009 International SoC Design Conference (ISOCC)

A power-constrained MPU roadmap for the International Technology Roadmap for Semiconductors (ITRS)

Solid-State Electronics

Nanoscale FinFETs for low power applications

Multiple-gate SOI MOSFETs

FinFET design considerations based on 3-D simulation and analytical modeling

Journal	IEEE Transactions on Electron Devices
ISSN	00189383
Open Access	No