Thermopower measurements in a range of 300-650 K along with room temperature optical absorption and electrical resistivity studies were performed on indium oxide (IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar ambient displayed characteristics attributable to oxygen loss. The observations were substantiated with optical absorption and electrical resistivity results. © 2009 IOP Publishing Ltd.

S. Kasi Viswanathan

Department Of Physics

As-grown

DC SPUTTERING

Electrical resistivities

High temperatures

INDIUM OXIDES

INDIUM TIN OXIDE FILMS

INDIUM TIN OXIDE THIN FILMS

ITO FILMS

OPTICAL ABSORPTIONS

OXYGEN LOSS

Room temperatures

Thermopower

THERMOPOWER MEASUREMENTS

Absorption

Electric network analysis

Electric resistance

indium

Light absorption

Oxygen

Oxygen vacancies

Photolithography

TITANIUM COMPOUNDS

Oxide films

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films

Semiconductor Science and Technology

Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase. © 2010 American Institute of Physics.

Fulltext

Applied Physics Letters

Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

Transmission electron microscopy (TEM) and ion beam techniques were used to study the DC reactively sputtered In2O3 films on Si substrates. TEM studies showed that the films are single-phase and polycrystalline. Particle induced X-ray emission (PIXE) enabled trace analysis of the films. Rutherford backscattering spectrometry (RBS) investigations suggested the formation of 20 nm thick inhomogeneous interface region between In2O3 film and Si. Secondary ion mass spectrometry (SIMS) depth profiling and current-voltage measurements confirmed the presence of the interface region. © 2004 Elsevier B.V. All rights reserved.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Growth and ion beam study of DC sputtered indium oxide films

Thin Solid Films

Carrier transport in polycrystalline ITO and ZnO:Al II: The influence of grain barriers and boundaries

Physical Review B

Band structure of indium oxide: Indirect versus direct band gap

Journal of Physics D: Applied Physics

Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO

Effective modification of indium tin oxide for improved hole injection in organic light-emitting devices

Journal	Semiconductor Science and Technology
ISSN	02681242
Open Access	No