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Reliability analysis of full adder in Schottky Barrier Carbon Nanotube FET technologyPublished in Institute of Electrical and Electronics Engineers Inc.
2014
Pages: 274 - 277
The reliability of digital circuits designed in Schot-tky Barrier Carbon Nanotube Field Effect Transistor (SB-CNTFET) technology is investigated in this paper. We discuss factors that affect the height of the Schottky barrier and as a consequence the performance of circuits in SB-CNTFET. We then present a transistor-level analysis of reliability. The analysis is performed first for an inverter and a 2-to-1 multiplexer. It is then used to get an estimate of the probabilistic behaviour of a one-bit full-adder. © 2014 IEEE.
Topics: Carbon nanotube field-effect transistor (67)%67% related to the paper, Schottky barrier (61)%61% related to the paper, Adder (55)%55% related to the paper and Reliability (semiconductor) (54)%54% related to the paper
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About the journal
| Journal | Data powered by Typeset14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 |
|---|---|
| Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |
| Open Access | No |
Authors (1)
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Concepts (17)
Adders- Carbon
- Carbon nanotubes
- Multiplexing
- Multiplexing equipment
- Nanoelectronics
- Nanosensors
- Reliability
- Reliability analysis
- Schottky barrier diodes
- Yarn
- CARBON NANOTUBE FET
- FULL ADDERS
- MULTIPLEXER
- NANOELECTRONIC CIRCUITS
- SCHOTTKY BARRIERS
- CARBON NANOTUBE FIELD EFFECT TRANSISTORS
