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Polysilicon piezoresistive pressure sensor using Silicon-On-Insulator (SOI) approach
Published in
2002
Volume: 5062
   
Issue: 2
Pages: 853 - 862
Abstract
In this paper, the design and fabrication of polysilicon piezoresistive pressure sensor are presented. The design considerations such as the membrane thickness and the arrangement pattern of polysilicon piezo-resistors on the membrane are discussed with emphasis on the use of SOI approach. The results obtained on the pressure sensors and the temperature coefficient of resistivity of polysilicon resistors are presented. The results presented include the electrical training of polysilicon resistors for compensating zero offset voltage in the pressure sensors.
About the journal
JournalProceedings of SPIE - The International Society for Optical Engineering
ISSN0277786X
Open AccessNo
Authors (4)
Concepts (13)
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    Electric potential
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    Heat resistance
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    Piezoelectric devices
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    Polysilicon
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    Pressure measurement
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    Resistors
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    Sensors
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    Thickness measurement
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    ELECTRICAL TRIMMING
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    MEMBRANE THICKNESS
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    POLYSILICON PIEZORESISTIVE PRESSURE SENSOR
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    POLYSILICON RESISTORS
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    Silicon on insulator technology