Polarization dependent plasma dispersion effect is investigated for single-mode SOI waveguides (λ ∼ 1550 nm) with laterally diffused p-n junction. The lateral p-n junction of desired length is formed initially in 1.5 μm thick SOI layer (BOX-2 μm) by diffusion doping and then the single-mode waveguides with appropriate design parameters (width W, height H, and slab height h) is defined along the junction for simulations studies to estimate Vπ and Lπ. It is observed that the device becomes more and more polarization sensitive as the device layer thickness (H) decreases, which is justified appropriately by calculating polarization dependent confinement factors as well as free carrier overlaps with the corresponding guided modes. © 2018 IEEE.

Bijoy Krishna Das

Department of Electrical Engineering

Riddhi Nandi

Photonics

Semiconductor junctions

Waveguides

APPROPRIATE DESIGNS

Confinement factor

ELECTROOPTIC EFFECTS

Free carriers

PLASMA DISPERSION EFFECTS

Polarization sensitive

SINGLE MODE WAVEGUIDES

SOI WAVEGUIDES

Polarization

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Polarization dependent electro-optic effect in SOI waveguides with laterally diffused P-N junction

2018 3rd International Conference on Microwave and Photonics, ICMAP 2018

Diffusion doped p-i-n/p-n diodes in SOI substrate is proposed for the fabrication of active silicon photonics devices with scalable waveguide cross-sections. The p-Type and n-Type diffusion doping parameters are optimized for the fabrication of tunable single-mode waveguide phase-shifters with microns to submicron cross-sectional dimensions. The simulations results show that the shape of depletion layer can be effectively engineered by suitably positioning the rib waveguide with respect to the gap between doping windows. We could thus introduce an additional control parameter to optimize over-All figure of merits of the phase-shifter for various applications. For an optimized set of diffusion parameters, the VπLπ of single-mode waveguides designed with 1μm, 0.5μm, and 0.25μm device layers (under reverse bias operating in TE-polarization at λ ∼ 1550 nm) are found as 2.7 V-cm, 2.1 V-cm, and 1.6 V-cm, respectively. The typical p-n junction capacitance of an optimized 0.25μm single-mode waveguide is estimated to be &lt; 0.5 fF/μm, which is comparable to that of ion-implanted p-n waveguide junctions. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

Proceedings of SPIE - The International Society for Optical Engineering

Diffusion doped p-i-n/p-n diodes for scalable silicon photonics devices

Journal of Lightwave Technology

Experimental Parametric Study of a Silicon Photonic Modulator Enabled 112-Gb/s PAM Transmission System With a DAC and ADC

Semiconductor Science and Technology

On the effective carrier lifetime of a silicon p–i–n diode optical modulator

IEEE Journal of Quantum Electronics

Electrooptical effects in silicon

Journal	Data powered by Typeset2018 3rd International Conference on Microwave and Photonics, ICMAP 2018
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open Access	No