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Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material
Published in OSA - The Optical Society
2019
PMID: 31199399
Volume: 44
   
Issue: 12
Pages: 3134 - 3137
Abstract
Highly reproducible and precisely controlled gradual variation in optical reflectivity or electrical resistance between amorphous and crystalline phases of phase change (PC) material is a key requirement for multilevel programming. Here we report high-contrast multilevel set and reset operations through accumulative switching in growth-dominated AgInSbTe PC material using a nanosecond laser-based pump-probe technique. The precise tuning of fractions of crystallized or re-amorphized region is achieved by means of controlling the number of irradiated laser pulses enabling six stable multilevels with high-reflectivity contrast of 2% between any two states. Furthermore, Raman spectra of irradiated spots validate the structural changes involved during multilevel switching between amorphous and crystalline phases. © 2019 Optical Society of America
About the journal
JournalData powered by TypesetOptics Letters
PublisherData powered by TypesetOSA - The Optical Society
ISSN01469592
Impact Factor1.230
Open AccessNo
Citation Styleunsrt
Sherpa RoMEO Archiving PolicyGreen
Concepts (16)
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    Antimony compounds
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    Crystalline materials
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    Indium compounds
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    Phase change materials
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    PUMPING (LASER)
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    Reflection
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    Silver compounds
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    AMORPHOUS AND CRYSTALLINE PHASIS
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    Electrical resistances
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    HIGH REFLECTIVITY
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    Multilevel programming
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    Nanosecond lasers
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    OPTICAL REFLECTIVITY
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    PUMP-PROBE TECHNIQUE
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    SWITCHING PROCESS
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    Tellurium compounds