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Measurement and optimization of Gummel-Poon model dc parameters of bipolar junction transistorPublished in Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
2000
Volume: 3975
One of the device models used for bipolar junction transistors (BJTs) in circuit simulators like SPICE is the Gummel-Poon model. Gummel-Poon model is an extension of Ebers-Moll model and includes second order effects. Gummel-Poon model defines 19 direct current (dc) and 21 alternating current (ac) parameters for BJT. In this context, all the Gummel-Poon model DC parameters are extracted for the BJT for a particular process. An optimized analysis is proposed for the extraction of the parameters modeling the base resistance of the BJT.
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Related Papers (3)
About the journal
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Publisher | Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States |
| ISSN | 0277786X |
| Open Access | No |
Authors (2)
Enakshi Bhattacharya- Sensitivity and stress in pressure sensors with composite silicon/macroporous silicon membranes
- Studies on cantilever based triglyceride biosensor
- A novel polysilicon based process for three terminal surface micromachined cantilever
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Vinita Vasudevan- A hierarchical technique for statistical path selection and criticality computation
- Analysis of clock jitter in continuous-time sigma-delta modulators
- A time-domain technique for computation of noise spectral density in switched capacitor circuits
- Simulation of the effects of timing jitter in track-and-hold and sample-and-hold circuits
Concepts (6)
Electric resistance measurement- Optimization
- Semiconductor device models
- BIPOLAR JUNCTION TRANSISTORS (BJT)
- GUMMEL-POON MODEL
- Bipolar transistors
