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Electrical transport in La1-xCaxMnO3 thin films at low temperatures
Published in Indian Academy of Sciences
2002
Volume: 58
   
Issue: 5-6
Pages: 1079 - 1083
Abstract
We report here the low-temperature resistivity of the chemical solution deposited La1-xCaxMnO3 (x = 0.2, 0.3 and 0.33) thin films on LaAlO3 substrates. The films were post-annealed in atmosphere at 850°C. The low-temperature resistivity data has been studied in order to understand the nature of low-temperature conduction processes. The data showed T2 dependence from 60 K to 120 K consistent with the single magnon scattering process. The deviation from this quadratic temperature dependence at low temperatures is attributed to the collapse of the minority spin band. The two-magnon and electron-phonon processes contribute to scattering of carriers in the temperature range above 120 K.
About the journal
JournalPramana - Journal of Physics
PublisherIndian Academy of Sciences
ISSN03044289
Open AccessNo
Concepts (15)
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    Annealing
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    Bandwidth
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    Colossal magnetoresistance
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    Electric conductivity of solids
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    Electrodeposition
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    Electron scattering
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    Film preparation
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    Lanthanum compounds
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    Low temperature effects
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    Magnetization
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    Parameter estimation
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    Phonons
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    Substrates
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    MAGNON SCATTERING
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    Magnetic thin films