Highly transparent (Transmittance >90%), solution-processed thin films of CuO with a direct bandgap of 3.87 eV were first time utilized for solar blind photo-detection. The CuO thin-film-based photodetector has shown very large DUV/Vis. rejection ratio of ∼5430. The device has shown photo-responsivity value of 7.77 AW -1 and photo-detectivity of 3.08× 1011 cm · Hz 1/2W · 1. Interestingly, the device has shown persistent photoconductivity with a retention time of several days. In order to use the device for optical memory, the reset mechanism has been successfully demonstrated by annealing the device at 50 °C. The developed solution processed, highly transparent, solar-blind photodetector has immense potential for next-generation cost-effective optoelectronic devices. © 1980-2012 IEEE.
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|Journal||Data powered by TypesetIEEE Electron Device Letters|
|Publisher||Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.|