Header menu link for other important links
X
Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors
Published in
2003
Volume: 50
   
Issue: 2
Pages: 532 - 534
Abstract
It is shown in this work that sulfur passivation followed by a deionized water rinse reduces the dark current of InGaAs-InP PIN photodetectors significantly. This reduction in dark current is shown to be due to reduced recombination at the exposed mesa surface. Detectors with polyimide capping after sulfur passivation showed no degradation in characteristics with time.
About the journal
JournalIEEE Transactions on Electron Devices
ISSN00189383
Open AccessNo
Concepts (7)
  •  related image
    Passivation
  •  related image
    POLYIMIDES
  •  related image
    Semiconducting indium gallium arsenide
  •  related image
    Semiconducting indium phosphide
  •  related image
    Sulfur
  •  related image
    SULFUR PASSIVATION
  •  related image
    Photodetectors