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Effect of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 67
Issue: 2
Pages: 606 - 613
In this article, the effect of charge partitioning in a silicon-on-insulator lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor on its nonlinearity model is investigated. It is found that the prediction of the third-order intermodulation distortion (IM3) depends on the model equivalent circuit (EC) and appropriate charge assignments at various nodes therein. The investigation is carried out using a highly accurate static model of LDMOS along with a couple of different charge-partitioning schemes in order to single out their effects on the nonlinearity model behavior. We observe that charge partitioning in a more flexible EC framework yields an improved IM3 prediction when compared with the TCAD simulated results. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo
Authors (4)