AlGaN/GaN metal-insulator-semiconductor diodes (MISDs) with three different gate dielectrics, viz. silicon nitride (SiNx), aluminium oxide (Al2O3) and aluminium nitride (AlN) were fabricated. Capacitance-conductance method based on multi-frequency C-V measurements was used for characterizing dielectric/semiconductor interface traps. Results show that lower density of shallow traps is present in Al2O3 and AlN MIS devices as compared to devices having SiNx gate dielectric. © 2016 IEEE.

Amitava Dasgupta

Department of Electrical Engineering

Nandita Dasgupta

Gourab Dutta

Aluminum

Aluminum gallium nitride

Aluminum nitride

Capacitance

Dielectric materials

Gallium nitride

Gate dielectrics

III-V semiconductors

Metal insulator boundaries

MIM devices

MIS devices

Nitrides

Semiconductor devices

Semiconductor diodes

Semiconductor insulator boundaries

Silicon nitride

Wide band gap semiconductors

Al2O3

CONDUCTANCE METHOD

Interface traps

METAL-INSULATOR SEMICONDUCTOR DEVICES

SiNx

Aluminum Compounds

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

2016 3rd International Conference on Emerging Electronics, ICEE 2016

Dependence of threshold voltage (VTh) on oxide thickness (tox) for GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputter-deposited Al2O3 as gate dielectric is studied in detail. Different III-nitride (III-N) heterostructures (AlGaN/GaN and AlInN/GaN) with/without GaN cap layer were used for fabricating these MIS devices. Interestingly, for all the sets of devices, a positive shift in VTh was observed initially with a increase in tox, followed by a negative shift of the same. A comprehensive analytical model has been proposed to explain the variation of VTh with tox and has been shown to match the experimental data for MIS-HEMTs fabricated on different heterostructures and with different values of tox. This model allows the extraction of different charge components in the oxide or at oxide/III-N interface. Normally OFF AlInN/GaN MIS-HEMTs with VTh of +0.67 V have been demonstrated with the optimized tox of sputtered Al2O3. © 2016 IEEE.

IEEE Transactions on Electron Devices

Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer

IEEE Electron Device Letters

TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Applied Physics Letters

Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique

Semiconductor Science and Technology

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Comparison of shallow interface traps in AlGaN/GaN MIS-devices with three different gate dielectrics

Journal	Data powered by Typeset2016 3rd International Conference on Emerging Electronics, ICEE 2016
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open Access	No