Get all the updates for this publication
Articles
Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETsPublished in
2008
Volume: 55
Issue: 12
Pages: 3442 - 3449
In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate material work function, and gate voltage. A model for the subthreshold behavior of three-terminal DG MOSFETs is also presented. The results of the models show excellent match with simulations using MEDICI. The analytical models provide physical insight which is helpful for device design. © 2008 IEEE.
Topics: Subthreshold slope (70)%70% related to the paper, Subthreshold conduction (67)%67% related to the paper, Gate oxide (58)%58% related to the paper, AND gate (56)%56% related to the paper and MOSFET (52)%52% related to the paper
View more info for "Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs"
Content may be subject to copyright.
Related Papers (3)
ConferencesDrift compensation using bulk feedback in a neural recording system based on open-gate FET2015 | Institute of Electrical and Electronics Engineers Inc.- ConferencesAlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric2018 | Institute of Electrical and Electronics Engineers Inc.
About the journal
| Journal | IEEE Transactions on Electron Devices |
|---|---|
| ISSN | 00189383 |
| Open Access | No |
Authors (3)
Anjan Chakravorty- Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations
- Design of novel high-Q multipath parallel-stacked inductor
- Compact Modeling of Proximity Effect in High- Q Tapered Spiral Inductors
- Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs
Nandita Dasgupta- Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions
- Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures
- Zn-vacancy induced violet emission in p-type phosphorus and nitrogen codoped ZnO thin films grown by pulsed laser deposition
- A continuous analytical model for 2-deg charge density in Algan/Gan hemts valid for all bias voltages
Amitava Dasgupta- Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions
- Fabrication of reliable RF MEMS switches in CPW configuration
- 1D and 2D wide acoustic bandgap Phononic Crystal structures for performance improvement of AlN-on-Si resonators operating in GHz range
- A continuous analytical model for 2-deg charge density in Algan/Gan hemts valid for all bias voltages
Concepts (13)
Drain current- Galerkin methods
- Models
- Port terminals
- Semiconducting silicon compounds
- Silicon
- Analytical model
- DOUBLE GATE (DG)
- DRAIN-INDUCED BARRIER LOWERING (DIBL)
- Silicon-on-insulator (soi)
- SUBTHRESHOLD CURRENT
- Subthreshold slope
- Mosfet devices
