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1D and 2D wide acoustic bandgap Phononic Crystal structures for performance improvement of AlN-on-Si resonators operating in GHz rangePublished in IEEE Computer Society
2019
Volume: 2019-October
Pages: 1731 - 1734
Design and simulation of Phononic Crystals (PnCs) with a wide Acoustic Band Gap (ABG) around 1 GHz is presented. A new PnC unit cell topology is designed, which has a very wide ABG of 138 MHz with center frequency around 1 GHz and minimum feature size of 0.6 μm. Wider ABG allows better enhancement of the Quality factor (Q) by reducing the anchor loss. Effect of geometrical variation and the periodicity of PnC are discussed. ABG for 1D and 2D periodicity is simulated and geometrical dimensions to obtain similar ABG in both cases are compared. © 2019 IEEE.
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About the journal
| Journal | Data powered by TypesetIEEE International Ultrasonics Symposium, IUS |
|---|---|
| Publisher | Data powered by TypesetIEEE Computer Society |
| ISSN | 19485719 |
| Open Access | No |
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Amitava Dasgupta- Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions
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Deleep R. Nair- 1D and 2D wide acoustic bandgap Phononic Crystal structures for performance improvement of AlN-on-Si resonators operating in GHz range
- Drift compensation using bulk feedback in a neural recording system based on open-gate FET
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Concepts (16)
Acoustic devices- Acoustic resonators
- Aluminum nitride
- Energy gap
- Iii-v semiconductors
- Microelectromechanical devices
- Phonons
- ACOUSTIC BAND GAPS
- ANCHOR LOSS
- Design and simulation
- Geometrical dimensions
- GEOMETRICAL VARIATIONS
- MEMS RESONATORS
- MINIMUM FEATURE SIZES
- Phononic crystal
- Chromium compounds
