The influence of substrate temperature (300 to 460 K) on the electrical resistivity and thermoelectric power of thin films of SnTe and SnTe doped with 10% excess tin are investigated. The observed variation cannot be attributed to the improvement in crystallinity alone, and the results are explained by considering the reduction in carrier concentration and the two‐valence band structure of SnTe. Copyright © 1988 WILEY‐VCH Verlag GmbH & Co. KGaA

Natrajan Ganesan

V. Sivaramakrishan

Band structure

electric conductivity

Carrier concentration

Substrate temperature

Thermoelectric power

Thin films

Semiconducting tin compounds

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

physica status solidi (a)

Thesis Eleven

Introduction

Journal of Physics D: Applied Physics

Effect of substrate temperature on SnTe films

Journal of Physics C: Solid State Physics

Anomalous resistivity at the structural phase transition of polycrystalline SnTe

Journal of Vacuum Science and Technology

Abstract: Thin films for electro−optical devices

Journal of Materials Science

Structure of liquid cadmium-antimony alloys

Variation in electrical properties of SnTe thin films with substrate temperature

Journal	physica status solidi (a)
ISSN	00318965
Open Access	No