Heterostructure interfaces play a major role in defining the performance of thin-film devices. High-k dielectric oxide-semiconductor heterostructures are being extensively investigated as promising candidates for future integrated circuits, thus it becomes important to precisely probe the interfaces at the atomic scale for technological advancements. In this work, a high-k dielectric oxide (Gd2O3)-semiconductor (Ge) interface was characterized at the atomic scale using complex-valued exit wave reconstructed from a set of focal series high-resolution transmission electron microscopy (HRTEM) images acquired without objective lens spherical aberration correction. The complexity of this characterization lies in removing image artefacts produced by amorphous layer deposited on the imaged region during ion milling which was successfully solved using an algorithm to remove amorphous background developed recently. The final result reveals that the interface of the present study is atomically sharp and flat. The thickness of the imaged region along viewing direction was estimated from channelling map. Comparing reconstructed amplitude of experimental data with that of simulated one generated using Density Functional Theory (DFT) optimized interface structure, it was found that the Gd2O3 layers were terminated at the Gd atoms in the interface. © 2019 Elsevier B.V.