Interface between dc sputtered In 2 O 3 and stepwise flash evaporated CuInTe 2 films were studied by probing Si/In 2 O 3 /CuInTe 2 and Si/CuInTe 2 /In 2 O 3 structures with the help of glancing angle X-ray diffraction, Rutherford backscattering spectrometry and micro-Raman spectroscopy. The results showed that in Si/In 2 O 3 /CuInTe 2 structure, a ∼20 nm thick interface consisting of In, Cu and O had formed between In 2 O 3 and CuInTe 2 and was attributed to the diffusion of Cu from CuInTe 2 into In 2 O 3 film. On the other hand, in Si/CuInTe 2 /In 2 O 3 structure, homogeneity of the underlying CuInTe 2 film was found lost completely. An estimate of the masses of the constituent elements showed that the damage was caused by loss of Te from CuInTe 2 film during the growth of In 2 O 3 film on Si/CuInTe 2 . © 2016 Elsevier B.V.

S. Kasi Viswanathan

Department Of Physics

Backscattering

Copper

Film growth

Interfaces (materials)

Raman spectroscopy

Rutherford backscattering spectroscopy

Silicon compounds

spectrometry

Thin films

X ray diffraction

Constituent elements

CUINTE2

Glancing angle x-ray diffractions

IN2O3

MICRO RAMAN SPECTROSCOPY

RUTHERFORD BACK-SCATTERING SPECTROMETRY

THIN FILM INTERFACES

Indium compounds

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Applied Surface Science

Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe2 as well as bulk polycrystalline CuInTe2. Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe2. Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser-sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A1 mode of CuInTe2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe2 region at higher excitation power. © 2009 IOP Publishing Ltd.

Semiconductor Science and Technology

Micro-raman spectroscopy studies of bulk and thin films of cuInTe 2

CuInTe2 films grown by stepwise flash evaporation onto glass and silicon substrates held at 573 K were studied using X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS) and Raman spectroscopy. XRD and TEM studies showed the formation of single-phase polycrystalline CuInTe2. Results of the RBS measurements showed the films to be near-stoichiometric and negligible diffusion of elements across the CuInTe2/Si interface. Various lattice vibrational modes identified by Raman measurements were found to match well with those reported for single-crystal CuInTe2, confirming the crystalline quality of the CuInTe2 thin films. © 2008 Elsevier B.V. All rights reserved.

Solar Energy Materials and Solar Cells

Growth and characterization of stepwise flash evaporated CuInTe2 thin films

CuInSe2/In2O3 structures were formed by depositing CuInSe2 films by stepwise flash evaporation onto In 2O3 films, which were grown by DC reactive sputtering of In target in presence of (Ar+O2) gas mixture. Phase purity of the CuInSe2 and In2O3 films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe2/In2O3/glass structures showed sharp peaks corresponding to (112) plane of CuInSe2 and (222) plane of In2O3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe2/In2O 3/Si structures in order to characterize the interface between In2O3 and CuInSe2. The results show that the CuInSe2 films were near stoichoimetric and In2O 3 films had oxygen deficient composition. CuInSe2/In 2O3 interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In2O 3/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces. © 2005 Elsevier Ltd. All rights reserved.

Journal of Physics and Chemistry of Solids

Characterization of interface between CuInSe2 and In 2O3

In2O3 thin films were grown by direct current reactive sputtering. Structural investigations using X-ray diffraction and transmission electron microscopy confirmed the single-phase and polycrystalline nature of the films. Rutherford backscattering spectrometry study of the interface of In2O3 films with Si indicated the formation of ∼20 nm thick intermediate region consisting of silicon, oxygen and indium. Annealing at 875 K in oxygen atmosphere led to an increase in interface layer thickness. Broadening of the interface and diffusion of silicon into In2O3 were observed in films annealed in argon at 875 K. Oxygen-to-indium atomic concentration ratio in the as-grown films was ∼1.44, which was found to vary depending upon the annealing conditions. However, films deposited over Si/SiO2 showed a sharp interface between the In2O3 film and SiO2. © 2005 Elsevier B.V. All rights reserved.

Thin Solid Films

Growth and Rutherford backscattering spectrometry study of direct current sputtered indium oxide films

Insulating films of In2O3 were prepared by sputtering indium in the presence of pure oxygen using dc magnetron sputtering. Transmission electron microscopic investigations showed the films to be single phase and polycrystalline. Analysis of the optical transmittance data showed the films to have an optical band gap of 3.71±0.01 eV. Tunnel junctions were made with high Tc superconductors Bi2Sr 2Ca1Cu2Oy and NdBa 2Cu3O7-δ using indium oxide as the barrier layer and Pb0.5In0.5 as the counter electrode. The conductance spectra displayed prominent structures attributable to energy gap. The reduced gap parameters for Bi2Sr2Ca1Cu 2Oy and NdBa2Cu3O 7-δ were found to be 4.0±0.5 and 5.2±0.6, respectively.

Fulltext

Journal of Applied Physics

Direct current magnetron sputtered In2O3 films as tunnel barriers

Studies on interface between In 2 O 3 and CuInTe 2 thin films

Journal	Data powered by TypesetApplied Surface Science
Publisher	Data powered by TypesetElsevier B.V.
ISSN	01694332
Open Access	No