In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.