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p-type gas sensing behaviour in high energy ion beam irradiated un-doped SnO2 thin films
S. Rani, , M.C. Bhatnagar, D. Kanjilal
Published in
Pages: 886 - 889
We report novel p-type behaviour in undoped SnO2 thin films irradiated with 75 MeV Ni+ ion beam. Gas response of the irradiated films with NH3 (reducing) and NO2 (oxidizing) gases shows an increase and decrease in resistance respectively indicating p-type conduction that also increases with increase in ion fluence. Photoluminescence spectroscopy of the irradiated films shows strong yellow peak corresponding to interstitial oxygen ions. The observed p-type conductivity is attributed to holes generated by these interstitial oxygen ions. Presence of interstitial oxygen ions is also supported by x-ray photoelectron spectroscopy. © 2008 IEEE.
About the journal
JournalProceedings of IEEE Sensors