An analytical thermal model to predict the peak temperature in silicon-on-insulator (SOI)-FinFET-like structures is proposed. The device is divided into two regions based on two separate heat flow paths and each region is analyzed and modeled independently to estimate the corresponding peak temperature. Later both the models are combined to obtain the peak temperature for the device. The temperature dependence of thermal conductivity of the semiconductor material is considered in the model. Modeling results show a high level of correlation with the 3-D COMSOL and electrothermal TCAD simulation for practical range of device dimensions and power densities. Finally, the model is validated with experimental data. © 1963-2012 IEEE.