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Magnetization and magneto-transport studies on Fe2VAl1-xSix
Published in Elsevier Ltd
2015
Volume: 648
   
Pages: 34 - 38
Abstract
Abstract We report on magnetoresistance, Hall and magnetization measurements of Fe2VAl1-xSix Heusler compounds for x = 0.005, 0.015, 0.02. There is a systematic change in the temperature coefficient of resistance (TCR) from negative to positive as the Si composition is increased. The Hall co-efficient shows that the carriers are electron like and the carrier density increases with Si concentration. Resistance measurements under magnetic field indicate a decreasing behavior under the application of magnetic field at low temperature region (T < 60 K), suggesting the suppression of scattering by magnetic field. Temperature and field dependent magnetization measurements did not show any significant change apart from the fact that the presence of super paramagnetic (SPM) cluster and its ordering at low temperatures. Arrott plot analysis of magnetization versus field also indicates the magnetic ordering with applied field below 60 K. © 2015 Elsevier B.V.
About the journal
JournalData powered by TypesetJournal of Alloys and Compounds
PublisherData powered by TypesetElsevier Ltd
ISSN09258388
Open AccessNo
Concepts (21)
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    Carrier concentration
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    Iron compounds
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    Magnetization
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    Magnetoresistance
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    Metal insulator boundaries
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    Metal insulator transition
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    Paramagnetism
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    Semiconductor insulator boundaries
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    Silicon
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    Silicon compounds
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    Temperature
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    Field-dependent magnetization
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    Heusler alloys
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    Low temperature regions
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    Magnetization measurements
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    RESISTANCE MEASUREMENT
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    SUPER PARAMAGNETIC CLUSTERS
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    Systematic changes
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    TEMPERATURE COEFFICIENT OF RESISTANCE
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    Vanadium compounds