P. R.S. Rao

Capacitors

Semiconductor Devices, MOS

FM MODULATORS

HIGH-SENSITIVITY

MOS varactor

VOLTAGE-TO-FREQUENCY CONVERTERS

VOLTAGE-VARIABLE CAPACITORS

VARACTORS

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

High-sensitivity MOS varactor

Solid State Electronics

Strong metal support interaction with supported group VIII metals is associated with the phase transformation of the support employed. The reduced uptake of hydrogen and the enhanced reactivity in CO hydrogenation in these systems are associated with the geometrical dispersion of the metal species, which is identified to have arisen from the formation of a ternary oxide phase and its subsequent reorganization under high temperature reduction conditions. XPS experimental evidence is provided for this postulate. © 1995 Chapman & Hall.

Journal of Materials Science

Strong metal support interaction state in the Fe/TiO2 system - an XPS study

Environmental Science & Technology

WILEY-INTERSCIENCE a division of John Wiley & Sons, Inc.

Correction

Analytical expressions are derived for the breakdown voltages of punched-through diodes having a plane structure terminated with cylindrical and spherical curved boundaries at the edges, through the use of suitable approximations for the electric field in the depletion layer. The expressions derived include both p+-i-n+ and p+-p-n+ (or p+-n-n+) types and are given in terms of the middle-region (i-layer or p-layer) width, the radius of curvature of the junction edge, the punchthrough voltage, and the plane parallel breakdown voltage of p+-i-n+ diodes. The results obtained include a correlation between the middle-region (p-layer) width and the width of the depletion layer in the curved portions of the junction when the applied reverse bias across the diode is just sufficient so that punchthrough takes in the portions where the junction is plane parallel. These results are made use of in the breakdown voltage calculations. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.

Fulltext

IEEE Transactions on Electron Devices

Analytical Solutions for the Breakdown Voltages of Punched-Through Diodes Having Curved Junction Boundaries at the Edges

Ion-implanted hyperabrupt junction voltage variable capacitors

Journal	Solid State Electronics
ISSN	00381101
Open Access	No