Indium-rich InxGa1-xN thin films were prepared on glass substrates by a mixed source modified activated reactive evaporation technique. All the films exhibit hexagonal wurtzite structure preferentially oriented along the c-axis. The band gap values obtained through Urbach fitting of the absorption edge were found to be in good agreement with the values obtained from photoluminescence spectra. The decrease in band gap below 1.9 eV (i.e., for pure InN) for indium-rich films is mainly due to the compensation of BursteinMoss shift due to gallium incorporation into the lattice which is further confirmed from the carrier concentration measurements. © 2011 World Scientific Publishing Company.

Mahaveer Kumar Jain

Department Of Physics

Absorption edges

BAND-GAP VALUES

BURSTEIN-MOSS SHIFT

Concentration Measurement

Glass substrates

Hexagonal wurtzite structure

In-band

Indium gallium nitride

INGAN

MARE

MODIFIED ACTIVATED REACTIVE EVAPORATION

Nanocrystallines

Photoluminescence spectrum

URBACH FITTING

Carrier concentration

Energy gap

Evaporation

Gallium alloys

Gallium nitride

Phase Transitions

photoluminescence

Substrates

Thin films

Zinc sulfide

indium

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

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IIT Madras

Growth of indium-rich nanocrystalline indium gallium nitride thin films by modified activated reactive evaporation

International Journal of Nanoscience

Indium nitride films have been grown using modified activated reactive evaporation (MARE). The films were grown on glass and silicon substrates at room temperatures, i.e. without any intentional substrate heating. In this technique, the substrates were kept on the cathode instead of the grounded electrode and hence subjected to low energy nitrogen ion bombardment leading to highly c-axis oriented films. The photoluminescence (PL) and Raman spectrum shows significant improvement in the quality of the films compared with conventional activated reactive evaporation. The band gap measured from the room temperature PL was found to be 1.9 eV. Very high growth rates can be achieved in the MARE growth technique. The modification in the activated reactive evaporation technique may have a large impact on the growth of various compounds such as metal oxides. © 2008 IOP Publishing Ltd.

Journal of Physics D: Applied Physics

Growth of InN thin films by modified activated reactive evaporation

Thin Solid Films

Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy

Journal of Crystal Growth

Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE

Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy

Applied Physics Letters

Effects of electron concentration on the optical absorption edge of InN

Journal	International Journal of Nanoscience
ISSN	0219581X
Open Access	No