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Effect of pre-sintering temperature on the structural and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films deposited by sol-gel technique
, M.C. Bhatnagar, G.L. Sharma, R. Manchanda, V.R. Balakrishnan
Published in
2004
Volume: 30
   
Issue: 8
Pages: 2283 - 2287
Abstract
(Ba0.5Sr0.5)TiO3 thin films have been deposited by sol-gel technique and the effect of pre-sintering temperature on the structural and dielectric properties has been studied. The sol was prepared from barium acetate and strontium acetate powders by dissolving them in acetic acid; while titanium isopropoxide was used as titanium source. Acetyl acetone, 2-methoxyethanol, and formamide were used as chelating agent, diluting reagent, and for getting crack free films, respectively. Two sets of films were prepared; one set pre-sintered at 400 °C while the other one at 600 °C. In all the cases, the final sintering temperature was kept fixed at 700 °C for 2 h. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), dielectric constant, and loss measurements and AC conductivity studies. It has been found that with an increase in the pre-sintering temperature from 400 to 600 °C, the dielectric constant increases from 225 to 383 (measured at 100 kHz); whereas, the loss tangent remains nearly constant at 0.03-0.05. The XRD results show better crystallinity and enhanced grain growth in case of films pre-sintered at 600 °C. The FTIR spectra reveals that there is significant removal of organic materials in films with higher pre-sintering temperature as compared to that with lower pre-sintering temperature. The AC conductivity studies show a decrease in the frequency exponent 's' with an increase in the pre-sintering temperature which has been correlated with the reduction in oxygen vacancy densities in the sample with higher pre-sintering temperature. © 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.
About the journal
JournalCeramics International
ISSN02728842