MIS capacitors on nitrided and non-nitrided Ge substrates with HfO 2 as the dielectric have been studied. Effective oxide thickness is found to be reduced after nitridation. Significant improvements in the electrical characteristics are observed for the devices fabricated on nitrided substrates. The value of density of interface states is found to be lower for nitrided device when compared to non-nitrided device. Leakage current is drastically reduced for the nitrided device. The Breakdown field strength is improved from 11.3 MV/cm for the non-nitrided device to 15.89 MV/cm for the nitrided device. © 2007 IEEE.

Amitava Dasgupta

Department of Electrical Engineering

Nandita Dasgupta

Administrative data processing

electric conductivity

Germanium

Hafnium compounds

Semiconductor device manufacture

Semiconductor device models

Semiconductor materials

Semiconductor switches

Switching circuits

Capacitance measurement

Current measurement

MIS CAPACITORS

MIS devices

Semiconductor devices

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

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IIT Madras

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Journal	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Open Access	No