The electrical and Hall resistivities of Tbx Fe100-x thin films in the temperature range 13-300 K were investigated. The sign of Hall resistivity at 300 K is found to change from positive for x=28 film to negative for x=30 film, in accordance with the compensation of Tb and Fe moments. All the films are seen to have planar magnetic anisotropy at 13 K. The temperature coefficients of electrical resistivities of the amorphous films with 19≤x≤51 are seen to be negative. The temperature dependence of Hall resistivity of these films is explained on the basis of random magnetic anisotropy model. The temperature dependences of Hall resistivities of the x=22 and 41 films are seen to exhibit a nonmonotonous behavior due to change in anisotropy from perpendicular to planar. The same behavior is considered for the explanation regarding the probable formation of Berry phase curvature in these films. © 2009 American Institute of Physics.