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Carrier dynamics of quantum well bistable lasers
Pukhraj R. Vaya
Published in
2001
Volume: 20
   
Issue: 5
Pages: 525 - 534
Abstract
The influence of carrier capture and transport effects on static and dynamic characteristics of multiple quantum well (MQW) bistable lasers are studied using the well barrier hole burning and carrier transport models. In the well barrier hole burning model, the ratio of carrier capture to release time (η) is varied and the hysterisis width, transient behavior are analyzed. Furthermore, the effect of carrier transport time on the bistable characteristics are also studied. The analyses are done by simulating the equivalent circuit of MQW bistable laser using the circuit simulation program Pspice. The hysterisis width is found to increase with an increase in η and transport time. In the transient simulation, increased turn on delay is observed in the case of a higher value of η. Larger transport time also results in delayed output response. © 2001 Taylor & Francis.
About the journal
JournalFiber and Integrated Optics
ISSN01468030
Open AccessNo
Concepts (9)
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    Charge carriers
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    Charge transfer
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    Computer simulation
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    Equivalent circuits
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    Hysteresis
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    Semiconductor quantum wells
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    Transport properties
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    QUANTUM WELL BISTABLE LASERS
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    Quantum well lasers