An analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs is presented. A simple polynomial approximation is used to model the sheet carrier concentration (psH) in the two-dimensional hole gas at the Si/SiGe interface. The interdependence of psH and the hole concentration at the Si/SiO2 interface (psS) is taken into account in the model, which considers current flow at both the Si/SiGe and the Si/SiO2 interfaces. This model is applicable to compressively strained SiGe buried-channel heterostructure PMOSFETs as well as tensile-strained surface-channel PMOSFETs. The model has been implemented in SABER, a circuit simulator. The results from the model show an excellent agreement with the experimental data. © 2006 IEEE.

Nandita Dasgupta

Department of Electrical Engineering

Amitava Dasgupta

Carrier concentration

Computer simulation

Heterojunctions

Interfaces (materials)

Polynomial approximation

Semiconducting Silicon Compounds

Semiconductor device models

Analytical model

Circuit simulation

Hole concentration

MOSFET devices

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs for circuit simulation

IEEE Transactions on Electron Devices

A unified model for gate capacitance-voltage characteristics of Si/SiGe heterostructure pMOSFETs is presented. This model is applicable to buried-channel, surface-channel, and dual-channel Si/SiGe heterostructure pMOSFETs. The results from the model are compared with the experimental results and are found to be in excellent agreement. A simple and accurate method for the extraction of parameters such as the valence band offset, Si cap layer thickness, threshold voltages, and substrate doping is also presented in this paper. © 2007 IEEE.

A unified model for gate capacitance-voltage characteristics and extraction of parameters of Si/SiGe heterostructure pMOSFETs

A unified model for the I-V characteristics of HEMTs valid for the subthreshold, linear and saturation regions of operation is presented. There is a smooth transition in the current from subthreshold to above threshold and also from linear to saturation. This results in highly continuous channel conductance (gds) and transconductance (gm), which are important circuit parameters in small signal analysis. Comparisons with experimental data show that the model is accurate and valid over a wide range. Further, it is established that the model holds good promise for analogue circuit design by subjecting it to a few benchmark tests. In addition, the model, which was originally developed for n-channel HEMTs, has been suitably modified to predict the I-V characteristics of p-channel HEMTs as well. Finally, an inverter circuit using p-channel HEMT as load and n-channel HEMT as driver has been successfully simulated using the circuit simulator SABER and the nature of the inverter characteristics are found to agree well with the experimental results. © IEE, 2005.

IEE Proceedings: Circuits, Devices and Systems

Unified analytical model of HEMTs for analogue and digital applications

A fully analytical model for the current-voltage (I-V) characteristics of HEMT's is presented. It uses a polynomial expression to model the dependence of sheet carrier concentration (n) in the two-dimensional electron gas (2-DEG) on gate voltage (Va)- The resultant I-V relationship incorporates a correction factor a analogous to SPICE MOSFET Level 3 model and is therefore more accurate than models assuming a linear n-VG dependence leading to square law type I-V characteristics. The model shows excellent agreement with experimental data over a wide range of bias. Further, unlike other models using nonlinear n3-Vo dependence, it neither uses fitting parameters nor does it resort to iterative methods at any stage. It also includes the effects of the extrinsic source and drain resistances. Due to its simplicity and similarity in formulation to the SPICE MOSFET Level 3 model, it is ideally suited for circuit simulation purposes. © 1998 IEEE.

A new spice mosfet level 3-like model of hemt's for circuit simulation

Mathematical Modelling of India’s Population and Rice Production with Entropy Maximisation

On the Threshold Voltage of Strained-&lt;tex&gt;$hbox Si hbox -- hbox Si_1-xhbox Ge_x$&lt;/tex&gt;MOSFETs

Semiconductor Science and Technology

Si/SiGe heterostructure parameters for device simulations

Journal	IEEE Transactions on Electron Devices
ISSN	00189383
Open Access	No