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Analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs for circuit simulation
Published in
Volume: 53
Issue: 6
Pages: 1411 - 1419
An analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs is presented. A simple polynomial approximation is used to model the sheet carrier concentration (psH) in the two-dimensional hole gas at the Si/SiGe interface. The interdependence of psH and the hole concentration at the Si/SiO2 interface (psS) is taken into account in the model, which considers current flow at both the Si/SiGe and the Si/SiO2 interfaces. This model is applicable to compressively strained SiGe buried-channel heterostructure PMOSFETs as well as tensile-strained surface-channel PMOSFETs. The model has been implemented in SABER, a circuit simulator. The results from the model show an excellent agreement with the experimental data. © 2006 IEEE.
About the journal
JournalIEEE Transactions on Electron Devices
Open AccessNo
Concepts (11)
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    Carrier concentration
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    Computer simulation
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    Interfaces (materials)
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    Polynomial approximation
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    Semiconducting silicon compounds
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    Semiconductor device models
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    Analytical model
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    Circuit simulation
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    Hole concentration
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    Mosfet devices