It is shown that the equivalent box representation of implanted doping profiles, derived in terms of the process parameters by matching the charge-voltage relationships of the actual profile and the box profile, can be used for accurately simulating the electrical characteristics of surface-channel (SC) MOSFETs and MESFETs having implanted channels. © 1989 IEEE

Shreepad Karmalkar

Department of Electrical Engineering

ELECTRIC NETWORKS--EQUIVALENT CIRCUITS

SUBSTRATES--DOPING

Transistors, Field Effect

DOPING PROFILE PARAMETERS

GAUSSIAN CHANNEL DOPING PROFILE

MESFET SIMULATION

SHORT CHANNEL MOSFET

SEMICONDUCTOR DEVICES, MOSFET

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

A process-parameter-based circuit simulation model for ion-implanted MOSFETs and MESFETs

IEEE Journal of Solid-State Circuits

Unification is the quest of science. This paper elucidates unified perspectives of the topics, namely, semiclassical carrier transport in the bulk of a semiconductor and the capacitance of a p-n junction, clarifying the unifying features of drift, diffusion, and thermoelectric currents in the former, and of the depletion and diffusion capacitances in the latter, to an extent not achieved in available books. The elucidation should be helpful in raising the comfort and retention levels and developing the theory building capacities of an average student studying the subject of semiconductor devices.

IEEE Transactions on Education

Simple unified elucidations of some semiconductor device phenomena

It is shown that, from the point of view of the behavior of the charge and position of the Two-Dimensional Electron Gas (2-DEG) as a function of gate-source and drain-source voltages, the complex High Electron Mobility Transistor (HEMT) can be regarded as a simple Buried-Channel (BC) MOSFET. Thus, the characteristics of a HEMT, namely channel charge and capacitance/transconductance as a function of gate voltage below and above threshold are akin those of a BC MOSFET. Hence, there are discrepancies in the conventional Surface Channel MOSFET-like approach to HEMT modeling. Existing simple BC MOSFET dc and ac models can be used for on-paper analysis and computer aided simulation of HEMT devices and circuits, if the HEMT is represented by an equivalent BC MOSFET as derived in this paper. The new representation can be useful for modeling of short-channel HEMT phenomena. © 1997 IEEE.

IEEE Transactions on Electron Devices

A new equivalent MOSFET representation of a hemt to analytically model non-linear charge control for simulation of hemt devices and circuits

The ability to express the depletion layer voltage drop Vd in terms of a quadratic function of the gate controlled depletion charge Qd is shown to be a key to the success of analytical modelling of ion-implanted MOSFETs and MESFETs. It is shown that such a quadratic function for the Vd-Qd characteristics of implanted FETs can be obtained by approximating the implanted doping profile by a "shifted-rectangle" profile whose parameters can be derived directly from implantation parameters. It is also shown that the shifted-rectangle approximation (SRA) is not just an artifice for simplicity but accurately conserves the actual Qd, Vd and depletion width conditions of both shallow and deep implanted Gaussian shaped doping profiles. The SRA simplifies the analysis of multiple-implanted devices and can be considered to be a basic approximation to be used along with the depletion and gradual channel approximations for a simple and accurate analysis of the non-uniformly doped FETs. © 1991.

Solid State Electronics

The shifted-rectangle approximation for simplifying the analysis of ion-implanted MOSFETs and MESFETs

In this paper, a new C-V analysis of the BC-MOSFET operating in the depletion region and at the onset of punch-through inversion is given. It is shown that, the parameters of the BC-MOSFET required for circuit simulation, namely, the flat-band voltage and the equivalent box representation for the channel-doping profile, as well as the straggle σ and the range Rp of the channel-doping useful for process tailoring can be easily obtained from simple C-V measurements. © 1988.

A simple C-V method to extract the correct equivalent box and the Gaussian representations of the channel-doping profile and the flat-band voltage of BC-MOSFETs

From the charge-voltage considerations, it is shown that the Gaussian-implanted profile of buried layers can be correctly represented by an equivalent box. The paper also shows that the average doping and the depth of this box can be obtained directly from a knowledge of the implantation parameters. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.

Journal	IEEE Journal of Solid-State Circuits
ISSN	00189200
Open Access	No