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A numerical simulation of hole and electron trapping due to radiation in silicon dioxidePublished in AIP
1991
DOI: 10.1063/1.349083
Volume: 70
Issue: 8
Pages: 4490 - 4495
The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study the buildup of charge in silicon dioxide due to radiation. The flat-band voltage shift (ΔVfb) is obtained as a function of total dose, the oxide thickness, the applied gate voltage, and the centroid of the trap distribution. The effect of including electron traps is studied. The results of the simulation are found to compare well with experimental data.
Topics: Electron (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [A numerical simulation of hole and electron trapping due to radiation in silicon dioxide. Journal of Applied Physics 70, 8 p4490-4495 (1991)] and may be found at https://doi.org/10.1063/1.349083.
About the journal
| Journal | Journal of Applied Physics |
|---|---|
| Publisher | AIP |
| ISSN | 00218979 |
| Open Access | No |
Authors (1)
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