A novel method for characterizing a single crystalline or poly-silicon solar photovoltaic (SPV) cell is proposed. The extraction of the parameters of an SPV cell is hindered by the presence of its leakage resistance. It is demonstrated here that in employing a negative resistance, not only the C-V characteristics but also the R-V characteristics along with the built-in potential and the doping concentration of an SPV cell are easily ascertained. The experimental results presented herein validate the proffered method. © 2006 IEEE.

Varadarajan Jagadeesh Kumar

Department of Electrical Engineering

C. R. Jeevandoss

Munusamy Kumaravel

BUILT-IN POTENTIAL

C-V CHARACTERISTICS

Doping concentration

R-V CHARACTERISTICS

Solar photovoltaics

NEGATIVE RESISTANCE

photovoltaic cells

Photovoltaic effects

Polysilicon

Solar concentrators

Solar power generation

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

A Novel Measurement Method to Determine the $C$ – $V$ Characteristic of a Solar Photovoltaic Cell

IEEE Transactions on Instrumentation and Measurement

A novel method for obtaining the capacitance - voltage (C-V) characteristic of single crystalline or polycrystalline silicon solar photovoltaic (SPV) cells is demonstrated. Measurement of the C-V characteristics of an SPV cell is hindered by the presence of leakage resistance. The proposed method compensates the parallel leakage resistance of a SPV cell with the addition of a negative resistance of equal value. Test results obtained through experimentation validate the efficacy of the proposed method. © 2010 IEEE.

2010 IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2010 - Proceedings

A novel method for the measurement of the C-V characteristic of a solar photovoltaic cell

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Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

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Application of junction capacitance measurements to the characterization of solar cells

IEEE Transactions on Power Electronics

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A novel measurement method to determine the C-V characteristic of a solar photovoltaic cell

Journal	IEEE Transactions on Instrumentation and Measurement
ISSN	00189456
Open Access	No