The effect of film thickness on the conduction activation energy and resistivity of flash evaporated Pb0.5Sn0.5Te thin films has been investigated. The conduction activation energy has been found to decrease with an increase in thickness. The observed variation of conduction activation energy with thickness has been explained using Seto's polycrystalline model. The linear reciprocal thickness dependence of electrical resistivity observed has been explained by the "effective mean free path model" of classical size effect. © 1995.

V. Damodara das

C. Bahulayan

Activation energy

electric conductivity

Grain boundaries

Polycrystalline materials

Semiconducting films

Semiconducting Lead Compounds

X ray diffraction

CONDUCTION ACTIVATION ENERGY

LEAD TIN TELLURIDES

SETO'S POLYCRYSTALLINE MODELS

Thin films

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Variation of conduction activation energy and resistivity with thickness in Pb0.5Sn0.5Te thin films

Solid State Communications

Thin films of Bi2Te2Se1 of various thicknesses have been deposited on clean glass plates using the flash evaporation technique. Electrical resistance and thermoelectric power measurements have been carried out on these films in the temperature range 300-485 K. The thickness dependences of electrical resistivity and thermoelectric power of the films have been analyzed using the effective mean-free path model. The thickness dependence of activation energy of the films is explained by Seto's polycrystalline model. Various material parameters such as mean-free path and Fermi energy have been calculated from the analysis of experimental data. The thermoelectric power factor of the films has been calculated using the measured electrical resistivity and thermoelectric power values. © 1998 American Institute of Physics.

Fulltext

Journal of Applied Physics

Size and temperature dependence of electrical resistance and thermoelectric power of Bi2Te2Se1 thin films

IEEE Journal of Quantum Electronics

Distributed Bragg-reflector Pb&lt;inf&gt;1-x&lt;/inf&gt;Sn&lt;inf&gt;x&lt;/inf&gt;Te/PbSe&lt;inf&gt;y&lt;/inf&gt;Te&lt;inf&gt;1-y&lt;/inf&gt;diode lasers

Thin Solid Films

Aging processes in thin radio-frequency sputtered zinc films

The electrical properties of polycrystalline silicon films

Applied Physics Letters

High‐speed Pb1−xSnxTe photodiodes

Science Education

Mercier, Andre. Analytical and canonical formalism in physics. New York 10014 (180 Varick Street): Dover Publications, Inc. 222 p. $1.75

Journal	Solid State Communications
ISSN	00381098
Open Access	No