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Tuning a strain-induced orbital selective Mott transition in epitaxial VO 2
, N.F. Quackenbush, H. Paik, C. Schlueter, T.-L. Lee, D.G. Schlom, L.F.J. Piper, W.-C. Lee
Published in American Physical Society
2016
Volume: 93
   
Issue: 24
Abstract
We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO 2 /TiO 2 films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is noninteger but close to the half filling. Because the overlaps of wave functions between d orbitals are modified by the strain, orbital-dependent renormalizations of the bandwidths and the onsite energy occur. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a noninteger filling number near the half filling such as for VO 2 , certain orbitals could reach an occupation number closer to half filling under the strain, resulting in a strong reduction in the quasiparticle weight Zα of that orbital. Our work demonstrates that such an orbital selective Mott transition, defined as the case with Zα=0 in some but not all orbitals, could be accessed by epitaxial-strain engineering of correlated electron systems. © 2016 American Physical Society.
About the journal
JournalData powered by TypesetPhysical Review B
PublisherData powered by TypesetAmerican Physical Society
ISSN24699950