Bright yellow and white-yellow light emitting ZnO-V2O5 polycrystalline powders are synthesized by engineering zinc oxide and different zinc vanadate phases. Emission characteristics strongly depend on different zinc vanadate phases. The bright yellow emission is originated from the 3T2 → 1A1 and 3T1 → 1A1 transitions in the VO4 tetrahedra of zinc vanadate phase. White-yellow emission is the combination of blue and green emissions due to native point defects of ZnO and the yellow and red emission from zinc vanadate. © 2015 Acta Materialia Inc.

Mamidanna Sri Ramachandra Rao

Department Of Physics

F. Bellarmine

Divya Deepthi

II-VI semiconductors

Light emission

Point defects

Powders

VANADIUM PENTOXIDE

Zinc oxide

Emission characteristics

Green emissions

Native point defects

POLYCRYSTALLINE POWDERS

TUNABLE OPTICAL PROPERTIES

WHITE EMISSIONS

YELLOW EMISSIONS

ZINC VANADATES

Optical properties

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Scripta Materialia

We report on the growth of ZnO nanostructures in different gas ambient (Ar and N 2 ) using pulsed laser deposition technique. Despite the similar growth temperature, use of N 2 ambient gas resulted in well-aligned nanorods with flat surface at the tip, whereas, nanorods grown with Ar ambient exhibited tapered tips. The Nanorods grown under N 2 ambient exhibited additional Raman modes corresponding to N induced zinc interstitials. The nanorods are c-axis oriented and highly epitaxial in nature. Photoluminescence spectroscopy reveals that the UV emission can be significantly enhanced by 10 times for the nanorods grown under Ar ambient. The enhanced UV emission is attributed to the reduction in polarization electric field along the c-axis. n-ZnO nanorods/p-Si heterojunction showed rectifying I–V characteristics with a turn of voltage of 3.4 V. © 2017 Elsevier B.V.

Applied Surface Science

Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures

Novel ZnO hexagonal nanocones have been synthesized on Si(100) substrate by directly evaporating zinc acetate dihydrate, at a low temperature of 400 °C, without using any carrier gas and catalyst. Clear formation of hexagonal nanocones was confirmed by high resolution scanning electron microscopy. Size of the hexagonal nanocones was found to be 600 nm. Structural analysis by X-ray diffraction pattern revealed that most of the nanocones were aligned along the c-axis (002). Chemical composition analysis by energy dispersive X-ray spectroscopy shows both zinc and oxygen are nearly equal in stoichiometry. Vapor-liquid-solid (VLS) mechanism was used to explain the growth of ZnO hexagonal nanocones. Diffused reflectance spectroscopy confirms the band gap of ZnO hexagonal nanocones as 3.34 eV. Photoluminescence of the ZnO hexagonal nanocones shows a near band-edge emission at 398 nm. No observable green-yellow emission, which corresponds to oxygen vacancies, was observed. Copyright © 2009 American Scientific Publishers.

Journal of Nanoscience and Nanotechnology

Synthesis of novel ZnO hexagonal nanocones by direct thermal evaporation method

Undoped and Cr-doped ZnO polycrystalline samples were synthesized chemically. Optical measurements confirmed the presence of Cr in the ZnO lattice. Microstructural studies of bulk samples revealed a network of petal-like structures found to be unique to Cr-doped samples. Elemental mapping of these samples revealed uniform distribution of Cr and Zn atoms. Cr doping was seen to suppress the recombination radiation near 385 nm and increase the stability of ZnO films in O2 atmosphere. © 2008 Acta Materialia Inc.

Microstructural, optical and electrical properties of Cr-doped ZnO

Journal of Applied Physics

Carbon related donor bound exciton transitions in ZnO nanowires

ACS Applied Materials & Interfaces

Energy-Transfer Efficiency in Eu-Doped ZnO Thin Films: The Effects of Oxidative Annealing on the Dynamics and the Intermediate Defect States

Nanoscale

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain

Tunable optical properties of multiphase ZnO-V2O5 polycrystalline powders

Journal	Data powered by TypesetScripta Materialia
Publisher	Data powered by TypesetElsevier Ltd
ISSN	13596462
Open Access	No