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Transient charge-based model for SiGe HBTs
Published in
2009
Pages: 62 - 65
Abstract
A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.
About the journal
Journal2009 International Conference on Emerging Trends in Electronic and Photonic Devices and Systems, ELECTRO '09
Open AccessNo
Concepts (19)
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    Compact model
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    Convergence problems
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    INTEGRAL CHARGE
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    Low frequency
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    Sige hbts
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    SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS
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    SIMULATED DATA
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    TRANSIENT CHARGES
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    Transient simulation
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    TRANSIT FREQUENCY
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    Bicmos technology
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    Bipolar transistors
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    Germanium
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    Heterojunctions
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    Model checking
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    Optical beam splitters
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    Photonic devices
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    Silicon alloys
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    Heterojunction bipolar transistors