Tellurium thin films of thicknesses between 25 and 200 nm have been vacuum-deposited on glass substrates at room temperature in a vacuum of 5×10-5torr. The thermoelectric power measurements on these films have been carried out, after annealing, in the temperature range from 300 to about 500 K. It is found from the study that thermoelectric power is independent of temperature and is also, apparently, independent of thickness, over the range of temperatures and thicknesses investigated. The results are discussed on the basis of size effect and thermoelectric effect theories. © 1981 Chapman and Hall Ltd.

V. Damodara das

N. Jayaprakash

N. Soundararajan

SEMICONDUCTOR MATERIALS - THERMOELECTRIC EFFECTS

Thermal effects

SEMICONDUCTING TELLURIUM

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Thermoelectric power of tellurium thin films and its thickness and temperature dependence

Journal of Materials Science

PbSe thin films of thicknesses in the range 20 to about 170 nm have been prepared on glass substrates held at room temperature by thermal evaporation of the bulk alloy at a pressure of 5×10-5 torr. The thermoelectric power of these films has been evaluated as a function of temperature in the range 300 to 500 K from the thermal e.m.f. data. It was found that the thermoelectric power of all the films initially increases with increasing temperature, then reaches a maximum, and, with a further increase in temperature, decreases rapidly and also changes sign. The possible reasons for this peculiar behaviour have been given. It is also found that there is no systematic variation of thermoelectric power with thickness of the films. This is probably due to completely specular scattering at the external and internal surfaces of PbSe thin films or to changes in stoichiometry of different films. © 1990 Chapman and Hall Ltd.

Journal of Materials Science: Materials in Electronics

Temperature variation of thermoelectric power of vacuum deposited PbSe thin films and its thickness dependence

Crystalline Sb2Te3 thin films of different thicknesses have been prepared by subsequent annealing (at 500 K) of vacuum deposited, as-grown, amorphous thin films of Sb2Te3 prepared on glass substrates at room temperature. Thermoelectric power and electrical resistivity of these annealed (crystalline) films have been determined as a function of temperature. The size dependence of thermoelectric power and electrical resistivity have been analyzed by the effective mean free path model of size effect. It is found that both the thermoelectric power and the electrical resistivity are linear functions of the reciprocal of thickness of the films. The data from the analyses of thermoelectric power and electrical resistivity have been combined to evaluate important material parameters such as carrier concentration, their mean free path, Fermi energy, and effective mass. The values of some of these are compared with the previous available values from literature.

Fulltext

Journal of Applied Physics

Thermoelectric power and electrical resistivity of crystalline antimony telluride (Sb2Te3) thin films: Temperature and size effects

PbTe thin films of thicknesses ranging from 400 to 4000 Å have been prepared by vacuum evaporation at a pressure of 5×10- 5 Torr on clean glass substrates held at room temperature. The thermoelectromotive force of these films has been measured in the temperature range 300-600 K. It is found that thermoelectric power, SF varies anomalously with temperature, being constant at lower temperatures, and rapidly decreasing at higher temperatures. SF is found to be positive indicating that the samples are p type. The anomalous behavior is explained by assuming that at higher temperatures additional donor levels are generated due to creation and ionization of defects in the system.

Anomalous temperature dependence of thermoelectric power of PbTe thin films

Izvestiya Rossiiskoi Akademii Nauk. Seriya Geograficheskaya.

Berichte der Bunsengesellschaft für physikalische Chemie

E. Gerlach, P. Grosse (Eds.).: The Physics of Selenium and Tellurium. Springer Series in Solid-State Sciences, Vol. 13. Springer-Verlag, Berlin, Heidelberg, New York 1979. 281 Seiten, Preis: DM 54,-.

Thin Solid Films

The dependence of the texture of tellurium thin films on vacuum deposition angle

Electrical transport properties of copper-doped tellurium films

Electrical properties of thermally evaporated tellurium films

Journal	Journal of Materials Science
Publisher	Kluwer Academic Publishers
ISSN	00222461
Open Access	No