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Thermally oxidized LPCVD silicon as gate dielectric on GaNPublished in
2009
A two step gate dielectric deposition technique on GaN, viz. thermal oxidation of Low Pressure Chemical Vapor Deposited (LPCVD) silicon is reported. Current-Voltage (I-V) and Capacitance-Voltage (C-V) characterization of the Metal Insulator Semiconductor (MIS) capacitors are carried out to assess the interface properties. MIS devices with thermal oxide show improved I-V characteristics compared to those with Plasma Enhanced Chemical Vapor Deposited (PECVD) SiO2. However, Si deposition and oxidation schedule has to be carefully optimized to achieve high quality SiO2 on GaN. ©2009 IEEE.
Topics: Gate dielectric (63)%63% related to the paper, Plasma-enhanced chemical vapor deposition (59)%59% related to the paper, Thermal oxidation (59)%59% related to the paper, MIS capacitor (57)%57% related to the paper and Chemical vapor deposition (56)%56% related to the paper
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Related Papers (3)
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About the journal
| Journal | 2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09 |
|---|---|
| Open Access | No |
Authors (2)
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Concepts (22)
Gate leakages- Interface state
- MIS CAPACITORS
- NON-UNIFORM OXIDATION
- Nonuniform
- PSEUDO-INVERSION
- Capacitance
- Capacitors
- Chemical vapor deposition
- Electron devices
- Gallium alloys
- Gallium nitride
- Gate dielectrics
- Gates (transistor)
- Metal insulator boundaries
- Oxidation
- Semiconductor device manufacture
- Silicon compounds
- Silicon oxides
- Switching circuits
- Vapors
- Mis devices
