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Temperature and bias dependent gate leakage in AlInN/GaN high electron mobility transistorPublished in IEEE Computer Society
2012
Temperature and bias dependence of gate leakage current in AlInN/GaN High Electron Mobility Transistor (HEMT) is studied over a wide range of temperature and bias. Poole-Frankel (PF) emission, Fowler-Nordheim (FN) Tunneling, impact ionization and hopping conduction are found to be the dominant leakage mechanisms at different regions of reverse bias. The results suggest that the gate leakage current is governed by not one but several mechanisms depending on the bias and temperature. © 2012 IEEE.
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About the journal
| Journal | Data powered by Typeset2012 International Conference on Emerging Electronics, ICEE 2012 |
|---|---|
| Publisher | Data powered by TypesetIEEE Computer Society |
| Open Access | No |
Authors (2)
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Concepts (11)
Impact ionization- Leakage currents
- ALINN/GAN
- FOWLER-NORDHEIM TUNNELING
- Gate leakages
- Gate-leakage current
- High electron mobility transistor (hemt)
- Hopping conduction
- Schottky contacts
- Traps
- High electron mobility transistors
