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Study of ZnTe-CdZnTe quantum well structures for optical emission and detection
Pukhraj R. Vaya, Ramya A. Srinivasan
Published in Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
1999
Volume: 3666
   
Pages: 294 - 300
Abstract
The strain introduced at the junction of two lattice mismatched semiconductors reshapes the valence band reducing the density of states, intervalence band absorption, Auger recombination and temperature sensitivity. In the present study, a strained ternary system CdxZn1-xTe on ZnTe substrate has been investigated. The effect of x on critical thickness, effective mass, band gap, optical gain and current density has been calculated. This system was chosen as it is useful in blue emission, emission at high temperature etc. and also it can be grown on Silicon substrate directly. The optical gain increases with x whereas current density decreases. The laser cavity length and number of quantum wells have been optimized for different temperatures and for Cd compositions of 0.1 and 0.2 and well widths of 50 A and 60 A. Further, intersubband transitions in symmetric - (ZnTe-CdxZn1-xTe-ZnTe) square quantum well have been studied. The effect of barrier height and well width on absorption coefficient and detectivity, which have a large bearing on the performance of a detector, have been studied. Absorption coefficient(α) and detectivity(Dλ) are calculated for different frequencies(w) for the given x and well width. The maximum value of α and Dλ are picked up from the α versus w, and Dλ versus w curves, and are plotted as the functions of Cd composition (x) and well width. Both α and Dλ increases with x and decreases with well width.
About the journal
JournalProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
ISSN0277786X
Open AccessNo
Concepts (16)
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    Computational methods
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    Density (optical)
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    Lattice constants
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    Light absorption
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    Light emission
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    Optimization
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    Semiconducting cadmium compounds
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    Semiconducting silicon
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    Semiconducting zinc compounds
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    Semiconductor growth
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    Semiconductor quantum wells
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    Substrates
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    AUGER RECOMBINATION PROCESS
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    CRITICAL THICKNESS
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    OPTICAL GAINS
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    Integrated optoelectronics