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Studies on ITO/Si junctions prepared by spray pyrolysis technique
Published in SPIE
1992
Volume: 1523
   
Pages: 334 - 345
Abstract
This paper deals with the photovoltaic behaviour of indium tin oxide (ITO)/silicon (single crystal) heterojunctions prepared by spray pyrolysis technique. The dependence of the photovoltaic properties on process temperature (Tp) and on the oxidation time (tox) have been studied. ITO on p-Si yielded ohmic contact. A photoconversion efficiency of 9.4 % is observed (under GE-ELH illumination of 100 mW/cm2) for both small (0.04 cm2) and large (1.0 cm2) areas of ITO/n-Si junctions prepared at a temperature of 380°C and for an oxidation time of 60 sec. The junctions are observed to be quite stable with time. An attempt is made to understand the interfacial oxide layer (SiO) and its effect on the photoconversion in these junctions. © 1992 SPIE. All rights reserved.
About the journal
JournalData powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
PublisherData powered by TypesetSPIE
ISSN0277786X
Open AccessNo
Concepts (17)
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    Heterojunctions
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    Indium compounds
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    Integrated circuits
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    Ohmic contacts
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    Photovoltaic effects
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    Silicon compounds
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    Single crystals
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    TIN OXIDES
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    Indium tin oxide
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    INTERFACIAL OXIDE LAYERS
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    OXIDATION TIME
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    Photoconversion
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    Photoconversion efficiency
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    Photovoltaic property
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    PROCESS TEMPERATURE
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    Spray-pyrolysis techniques
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    Spray pyrolysis