Indium tin oxide (ITO)/silicon (n and p, crystalline) junctions have been prepared by the reactive thermal evaporation technique. The photovoltaic properties of these junctions are studied as functions of process temperature (170-320 degrees C). A maximum efficiency of 3.26% has been obtained (100 mW cm-2 illumination produced by a GE-ELH lamp) at 250 degrees C for both ITO/n-Si and ITO/p-Si junctions. An attempt has been made to understand the results on the basis of a thin insulating oxide interface layer.