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Studies of the photovoltaic behaviour of indium tin oxide (ITO)/silicon junctions prepared by the reactive thermal evaporation technique
Published in
Volume: 7
Issue: 3
Pages: 324 - 327
Indium tin oxide (ITO)/silicon (n and p, crystalline) junctions have been prepared by the reactive thermal evaporation technique. The photovoltaic properties of these junctions are studied as functions of process temperature (170-320 degrees C). A maximum efficiency of 3.26% has been obtained (100 mW cm-2 illumination produced by a GE-ELH lamp) at 250 degrees C for both ITO/n-Si and ITO/p-Si junctions. An attempt has been made to understand the results on the basis of a thin insulating oxide interface layer.
About the journal
JournalSemiconductor Science and Technology
Open AccessNo
Concepts (6)
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    Indium tin oxide
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    Indium compounds
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    Photovoltaic effects
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    Semiconducting silicon
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    Semiconductor devices