Thin epitaxial layers of Pb1−xSnxTe are grown on (100) KCl substrates by molecular beam epitaxy (MBE) using a single Knudsen source. A typical source temperature of 600 °C and substrate temperatures of 250 to 350 °C are used. Laue, X‐ray, RHEED, SEM, and Van der Pauw techniques are employed to characterize these films. Layers 4 to 5 μm thick are grown at a growth rate of 0.75 μm/h. These layers are found to be p‐type having carrier concentrations in the range of 1017 to 1018 cm−3 and mobilities of the order of 103 cm2/Vs at 110 K. The composition x in the films is found to vary with the substrate temperature and the films grown at 325 °C exhibit the same value of x as the source material. Copyright © 1988 WILEY‐VCH Verlag GmbH &amp; Co. KGaA

K. Ponnuraju

Pukhraj R. Vaya

Jandhyala Sobhanadri

CRYSTALS - EPITAXIAL GROWTH

INFRARED DETECTORS - MATERIALS

MICROSCOPIC EXAMINATION - Scanning Electron Microscopy

SEMICONDUCTING FILMS - Growth

X-RAY ANALYSIS

LEAD TIN TELLURIDE

Molecular beam epitaxy

REFLECTED HIGH ENERGY ELECTRON DIFFRACTION (RHEED)

X-ray diffraction

Semiconducting Lead Compounds

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

physica status solidi (a)

The optical properties are studied of Pb1–xSnxTe films grown using molecular beam epitaxy from a single source of Pb0.8Sn0.2Te on KCl (100) substrates in the temperature range 250 to 350 °C. Pb1–xSnxTe is found to be a direct band gap material with absorption coefficient of the order of 103 cm−1 near and above the fundamental absorption region. The energy gap Eg at room temperature is determined for these films from the IR transmittance and reflectance spectra. The refractive index nr is studied in the spectral range 7.3 to 25.6 μm and its value in the range 7.3 to 11.5 μm for one of the films grown at 325 °C is found to be close to the bulk value. The variation of nr with substrate temperature is reported. Copyright © 1989 WILEY‐VCH Verlag GmbH &amp; Co. KGaA

The effects of substrate temperature on the optical properties of Pb1–xSnxTe films formed by molecular beam epitaxy

Theoretical calculations using a particle flux concept were carried out to determine the optimum substrate temperature for the growth of films of Pb0.82Sn0.18Te alloy on KC1(100) substrates by molecular beam epitaxy. The calculated value of 373 °C was found to be close to the experimentally observed value of 375 °C for Pb0.82Sn0.18Te. During growth a single source at a temperature of 600 °C was used. The grown films were characterized by X-ray diffraction and electrical and optical techniques. © 1988.

Thin Solid Films

Growth of Pb0.82Sn0.18Te by molecular beam epitaxy

Soviet Studies

Books received

Journal of Electronic Materials

Errata

Applied Physics Letters

Tunneling‐determined threshold current in Pb1−xSnxTe diode lasers

Crystals Organic Crystals, Germanates, Semiconductors

Growth, Properties and Applications of Narrow-Gap Semiconductors

Journal of Crystal Growth

Improved nucleation and a planar interface in LPE grown Pb1−xSnxTe heterostructures

Structural and electrical properties of Pb1 − xSnxTe films grown by molecular beam epitaxy

Journal	physica status solidi (a)
ISSN	00318965
Open Access	No