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Structural and electrical properties of Pb1 − xSnxTe films grown by molecular beam epitaxy
K. Ponnuraju, Pukhraj R. Vaya, Jandhyala Sobhanadri
Published in
1988
Volume: 105
   
Issue: 1
Pages: 161 - 169
Abstract
Thin epitaxial layers of Pb1−xSnxTe are grown on (100) KCl substrates by molecular beam epitaxy (MBE) using a single Knudsen source. A typical source temperature of 600 °C and substrate temperatures of 250 to 350 °C are used. Laue, X‐ray, RHEED, SEM, and Van der Pauw techniques are employed to characterize these films. Layers 4 to 5 μm thick are grown at a growth rate of 0.75 μm/h. These layers are found to be p‐type having carrier concentrations in the range of 1017 to 1018 cm−3 and mobilities of the order of 103 cm2/Vs at 110 K. The composition x in the films is found to vary with the substrate temperature and the films grown at 325 °C exhibit the same value of x as the source material. Copyright © 1988 WILEY‐VCH Verlag GmbH & Co. KGaA
About the journal
Journalphysica status solidi (a)
ISSN00318965
Open AccessNo
Concepts (10)
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    CRYSTALS - EPITAXIAL GROWTH
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    INFRARED DETECTORS - MATERIALS
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    Microscopic examination - scanning electron microscopy
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    Semiconducting films - growth
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    X-RAY ANALYSIS
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    LEAD TIN TELLURIDE
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    Molecular beam epitaxy
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    REFLECTED HIGH ENERGY ELECTRON DIFFRACTION (RHEED)
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    X-ray diffraction
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    Semiconducting lead compounds