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SIMS study of effect of Cr adhesion layer on the thermal stability of silver selenide thin films on Si
Published in
2008
Volume: 266
   
Issue: 8
Pages: 1480 - 1485
Abstract
Effect of heat treatment on silver selenide films grown from diffusion-reaction of Ag and Se films on Cr-buffered Si substrates was investigated up to 400 °C. X-ray diffraction (XRD), Scanning electron microscopy (SEM), Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) were used to characterize the films. XRD patterns of the films showed stress assisted change in preferential orientation of the films upon annealing: the films annealed at 200 °C exhibited a strong orientation along (2 0 0) plane, which changed to (0 1 3) after annealing at 300 and 400 °C. Dynamic SIMS measurements showed that Cr is confined to the interface and that there is no diffusion of Cr into silver selenide. © 2007 Elsevier B.V. All rights reserved.
About the journal
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ISSN0168583X
Open AccessNo
Concepts (8)
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    Annealing
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    Reaction kinetics
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    Scanning electron microscopy
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    Secondary ion mass spectrometry
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    Selenium compounds
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    Preferential orientation
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    SILVER SELENIDE
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    Thin films