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Selective area laser-assisted doping of SiC thin films and blue light electroluminescence
Published in Institute of Physics Publishing
2019
Volume: 52
   
Issue: 48
Abstract
Laser-assisted doping combined with annealing technique is used in selective areas to form a p-n junction on a SiC thin film grown by the pulsed laser deposition on a Si substrate at a temperature of 800 °C. This approach in an aluminum chloride solution and a phosphoric solution has resulted in p-SiC/n-Si and n-SiC/p-Si hetero-structures, respectively. Further, a functional in-plane p-n junction is realized side-by-side on the post-deposited SiC thin film. I-V characteristics by two probe technique showed the p-n diode characteristics. Blue light (400 nm) electroluminescence from the p-n junction on SiC thin film was observed in the forward biased condition. Further, an improvement in the I-V reverse characteristics was observed by illuminating the p-n SiC thin film with green/blue light. © 2019 IOP Publishing Ltd.
About the journal
JournalJournal of Physics D: Applied Physics
PublisherInstitute of Physics Publishing
ISSN00223727
Open AccessNo
Concepts (18)
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    ALUMINUM CHLORIDE
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    Chlorine compounds
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    Electroluminescence
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    Light
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    Pulsed laser deposition
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    Pulsed lasers
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    Semiconductor doping
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    Semiconductor junctions
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    Silicon carbide
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    ANNEALING TECHNIQUES
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    Iv characteristics
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    LASER-ASSISTED
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    PROBE TECHNIQUE
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    REVERSE CHARACTERISTICS
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    SELECTIVE AREAS
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    SIC THIN FILMS
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    Side by sides
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    Thin films