Header menu link for other important links
X
Role of abrasives in high selectivity STI CMP slurries
Published in
2008
Volume: 85
   
Issue: 8
Pages: 1748 - 1753
Abstract
In this study chemical mechanical planarization slurries for shallow trench isolation exhibiting high oxide to nitride polish rate selectivity were investigated and it was found that the abrasives play a major role in suppressing the nitride polish rate and enhancing selectivity. When glutamic acid is used as a selectivity enhancing additive, only ceria based slurries exhibit high selectivity while silica based slurries show low selectivity under identical conditions. A mechanism involving active sites on the ceria abrasive and interaction of glutamic acid with the active sites is proposed to explain the role of abrasive in enhancing selectivity. © 2008 Elsevier B.V. All rights reserved.
About the journal
JournalMicroelectronic Engineering
ISSN01679317
Open AccessYes
Concepts (19)
  •  related image
    CERIUM COMPOUNDS
  •  related image
    CHEMICAL MECHANICAL POLISHING
  •  related image
    Food additives
  •  related image
    Semiconducting silicon
  •  related image
    Silica
  •  related image
    Silicate minerals
  •  related image
    Silicon compounds
  •  related image
    Theorem proving
  •  related image
    Active sites
  •  related image
    CHEMICAL-MECHANICAL-PLANARIZATION (CMP)
  •  related image
    CMP SLURRIES
  •  related image
    ELSEVIER (CO)
  •  related image
    GLUTAMIC ACID (GLU)
  •  related image
    High selectivity
  •  related image
    Identical conditions
  •  related image
    POLISH RATES
  •  related image
    Shallow trench isolation (sti)
  •  related image
    SILICA BASED SLURRIES
  •  related image
    Abrasives