We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N[sbnd]H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N[sbnd]H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C. © 2016 Elsevier B.V.