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Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing
, , Paneerselvam E., Nakamura D., Palani I.A., Higashihata M.,
Published in Elsevier Ltd
Volume: 35
Pages: 312 - 317
Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing. © 2019 Elsevier Ltd.
About the journal
JournalData powered by TypesetMaterials Today: Proceedings
PublisherData powered by TypesetElsevier Ltd
Open AccessNo