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Preparation and characterization of flash-evaporated CuInSe2 thin films
D. Sridevi
Published in Springer India
1986
Volume: 8
   
Issue: 3
Pages: 319 - 324
Abstract
Thin films of CuInSe2 have been evaporated onto glass substrates by flash evaporation. The as-deposited films are amorphous and annealing in selenium atmosphere produces polycrystalline films. The films were characterized by tem and x-ray diffraction techniques. The optical absorption of the films shows three energy gaps of 1·03, 1·07 and 1·22 eV. The crystal field and spin-orbit splitting are thus found to be 0·04 eV and 0·16 eV respectively. The percentage d-character of the valence band states is ∼35%. The Arrhenius plot of electrical conductivity of films showed impurity ionization of EA = 75 meV. © 1986 the Indian Academy of Sciences.
About the journal
JournalData powered by TypesetBulletin of Materials Science
PublisherData powered by TypesetSpringer India
ISSN02504707
Open AccessYes