We have grown undoped and doped amorphous silicon (a-Si) by low-pressure chemical vapour deposition (LPCVD) from silane at 550 and 580°C. The samples were then post-hydrogenated in an RF hydrogen plasma. The material is characterized by measurement of conductivity, hydrogen content and the slope of the Urbach tail. The effect of fast thermal quenching on the conductivity is investigated and the thermal equilibrium temperature is measured for doped LPCVD a-Si.

Enakshi Bhattacharya

Department of Electrical Engineering

Amorphous films

Chemical vapor deposition

Electric conductivity measurement

Hydrogen

Hydrogenation

Polycrystalline materials

Refractive index

Semiconductor doping

SEMICONDUCTOR PLASMAS

Silanes

Silicon wafers

X ray diffraction

BRODLEY ANALYSIS

CONSTANT PHOTOCURRENT MEASUREMENT

Low pressure chemical vapor deposition

Plasma enhanced chemical vapor deposition

Substrate temperature

THERMAL EQUILIBRIUM TEMPERATURE

Amorphous silicon

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IIT Madras

Post-hydrogenation of low-pressure chemical vapour deposited amorphous silicon

Semiconductor Science and Technology

Journal	Semiconductor Science and Technology
ISSN	02681242
Open Access	No